Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes
作者： Ayşe Evrim Saatci , Orhan Özdemir , Kubilay Kutlu
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摘要: Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena based on minority carriers (electrons this case) studied through DC current-applied bias voltage (I-V) AC admittance measurements dark/light condition as a function ambient temperature (295 - 380 K). Either cases was departure traditional analysis, manifesting themselves regime diode. Increase frequency/temperature/light intensity within dark light conditions led to weaken maxima hump C-V curves finally turned into deep depletion mode after exceeding threshold value intensity. In resumed conditions, supplementary I-V carried out describe generation conduction mechanism(s) (electrons).
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