Double-step excitation in spin polarized photoemission from NEA GaAs(100)
作者： T. Luig , M. Rissmann , H. Merz
DOI: 10.1016/0038-1098(86)90766-0
关键词: Band bending 、 Excitation 、 Atomic physics 、 Electron 、 Photoelectric effect 、 Band gap 、 Chemistry 、 Quasi Fermi level 、 Excited state 、 Electron affinity
摘要: Abstract Spin polarized photoelectrons emitted from a NEA GaAs(100)-photocathode, which is activated in special way with oxygen and cesium, can have broad energy distribution maximum higher than expected for an one-photon excitation process within the bulk valence band edge into conduction band. Also shape of curves electrons depends on intensity incident light. This double-step observed aged and/or oxidized activation layers, especially surfaces strongly developed, negative electron affinity. To give explanation these effects, it suggested that excited absorb further photon bending region. second photoemission step seems to be enhanced by interfacial barrier between region cesium-oxygen layer as well existence two-dimensional surface subbands.
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