550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs
作者： P. Kordoš , A. Förster , M. Marso , F. Rüders
DOI: 10.1049/EL:19980039
关键词: Photodetector 、 Optoelectronics 、 Microwave 、 Bandwidth (signal processing) 、 Materials science 、 Capacitance 、 Molecular beam 、 Femtosecond 、 Optics 、 Carrier lifetime 、 Gallium arsenide
摘要: The authors demonstrate that a 550 GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. pulse response shows 0.4 and 0.6 ps rise fall times, respectively. is in agreement with value calculated using carrier lifetime of 0.2 ps, measured by femtosecond time-resolved reflectivity, capacitance 0.014 fF/µm2, determined from microwave measurements. device RC limited.
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