High-speed photodetector applications of GaAs and In x Ga 1- x As/GaAs grown by low-temperature molecular beam epitaxy
作者： S. Gupta , J. F. Whitaker , S. L. Williamson , G. A. Mourou , L. Lester
DOI: 10.1007/BF02649997
关键词:
摘要: … 2, where a 1.4 ps FWHM resolution is obtained at a noise-equivalent power of ~500 pW. Since the photoabsorbing material for the optoelectronic devices described above is … 1 and 2 …
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