Highly resistive annealed low-temperature-grown InGaAs with sub-500 fs carrier lifetimes
作者： C. Baker , I. S. Gregory , W. R. Tribe , I. V. Bradley , M. J. Evans
DOI: 10.1063/1.1824179
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摘要: We have optimized low-temperature-grown In0.3Ga0.7As for use in ultrafast photoconductive devices. Using low temperature ex situ annealing techniques, we produced a material that is highly resistive (∼104Ωcm), has sub-500fs carrier trapping lifetimes, and matched to 1.06μm laser excitation.
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