Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition
作者： A. Forchel , S. Crankshaw , L. C. Chuang , M. Moewe , C. Chang-Hasnain
DOI: 10.1063/1.2776358
关键词: Time resolved spectra 、 Nanowire 、 Materials science 、 Electron hole recombination 、 Chemical vapor deposition 、 Optoelectronics 、 Photoluminescence 、 Recombination 、 Metal 、 Recombination velocity
摘要: The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical vapor deposition. By means low temperature microphotoluminescence experiments, the determined properties as-grown NWs. emission individual NWs is characterized small linewidths as 2.3meV. Blueshifts NW energy between 25 and 56meV with respect to bulk are related radial carrier confinement in diameters 15 50nm. Time resolved investigations reveal a surface recombination velocity 6×102cm∕s indicate thermally activated nonradiative above approximately 20K.The 20K.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(17)
Xiangfeng Duan, Yu Huang, Yi Cui, Jianfang Wang, Charles M. Lieber, Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices Nature. ,vol. 409, pp. 66- 69 ,(2001) , 10.1038/35051047
J. Trägårdh, A. I. Persson, J. B. Wagner, D. Hessman, L. Samuelson, Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy Journal of Applied Physics. ,vol. 101, pp. 123701- ,(2007) , 10.1063/1.2745289
M Mattila, T Hakkarainen, M Mulot, H Lipsanen, Crystal-structure-dependent photoluminescence from InP nanowires. Nanotechnology. ,vol. 17, pp. 1580- 1583 ,(2006) , 10.1088/0957-4484/17/6/008
Henrik A. Nilsson, Claes Thelander, Linus E. Fröberg, Jakob B. Wagner, Lars Samuelson, Nanowire-based multiple quantum dot memory Applied Physics Letters. ,vol. 89, pp. 163101- ,(2006) , 10.1063/1.2362594
M. Mattila, T. Hakkarainen, H. Lipsanen, H. Jiang, E. I. Kauppinen, Enhanced luminescence from catalyst-free grown InP nanowires Applied Physics Letters. ,vol. 90, pp. 033101- ,(2007) , 10.1063/1.2431711
Yu Huang, Xiangfeng Duan, Yi Cui, Lincoln J Lauhon, Kyoung-Ha Kim, Charles M Lieber, Logic Gates and Computation from Assembled Nanowire Building Blocks Science. ,vol. 294, pp. 1313- 1317 ,(2001) , 10.1126/SCIENCE.1066192
G. Mayer, B. E. Maile, R. Germann, A. Forchel, P. Grambow, H. P. Meier, Time-resolved investigations of sidewall recombination in dry-etched GaAs wires Applied Physics Letters. ,vol. 56, pp. 2016- 2018 ,(1990) , 10.1063/1.103003
J. Noborisaka, J. Motohisa, S. Hara, T. Fukui, Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy Applied Physics Letters. ,vol. 87, pp. 093109- ,(2005) , 10.1063/1.2035332
Jianfang Wang, Mark S Gudiksen, Xiangfeng Duan, Yi Cui, Charles M Lieber, Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires Science. ,vol. 293, pp. 1455- 1457 ,(2001) , 10.1126/SCIENCE.1062340
Mark S. Gudiksen, Jianfang Wang, Charles M. Lieber, Size-Dependent Photoluminescence from Single Indium Phosphide Nanowires Journal of Physical Chemistry B. ,vol. 106, pp. 4036- 4039 ,(2002) , 10.1021/JP014392N