Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
作者： J. Noborisaka , J. Motohisa , S. Hara , T. Fukui
DOI: 10.1063/1.2035332
关键词:
摘要: We fabricated GaAs∕AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs were selectively grown on partially masked (111)B substrates; then AlGaAs was to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function growth time suggested that the sidewalls nanowires, forming structures. Microphotoluminescence measurements and reveal an enhancement photoluminescence intensity in Based these nanotubes formed anisotropic dry etching wet chemical preferential confirm formation structure explore new class materials.
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