Electrical characteristics of hybrid-organic memory devices based on Au nanoparticles
作者： Razan R. Nejm , Ahmad I. Ayesh , Dagou A. Zeze , Adam Sleiman , Mohammed F. Mabrook
DOI: 10.1007/S11664-015-3692-X
关键词: Nanotechnology 、 Silicon dioxide 、 Insulator (electricity) 、 Nanoparticle 、 Materials science 、 Sputtering 、 Organic memory 、 Silicon 、 Optoelectronics 、 Electrode 、 Fabrication
摘要: We report on the fabrication and characterization of hybrid-organic memory devices based gold (Au) nanoparticles that utilize metal–insulator–semiconductor structure. Au were produced by sputtering inert-gas condensation inside an ultrahigh-vacuum compatible system. The self-assembled a silicon dioxide (SiO2)/silicon (Si) substrate, then coated with poly(methyl methacrylate) (PMMA) insulating layer. Aluminum (Al) electrodes deposited thermal evaporation Si substrate PMMA layer to create capacitor. worked as charge storage elements, while is capacitor insulator. capacitance–voltage (C–V) characteristics fabricated showed clockwise hysteresis window 3.4 V, indicative electron injection from top Al electrode through into nanoparticles. Charge retention was measured at stress voltage, demonstrating retain 94% stored after 3 h continuous testing.
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