Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods
作者： A. Tataroğlu , Ş. Altındal
DOI: 10.1016/J.MEE.2008.07.001
关键词:
摘要: The purpose of this paper is to analyze electrical characteristics in Au/SiO"2/n-Si (MOS) capacitors by using the high-low frequency (C"H"F-C"L"F) capacitance and conductance methods. capacitance-voltage (C-V) conductance-voltage (G/@w-V) measurements have been carried out range 1kHz-10MHz bias voltage (-12V) (12V) at room temperature. It was found that both C G/@w MOS capacitor were quite sensitive relatively low frequencies, decrease with increasing frequency. increase especially frequencies resulting from presence interface states Si/SiO"2 interface. Therefore, interfacial can more easily follow an ac signal consequently, which contributes improvement properties capacitor. density (N"s"s) determined taking into account surface potential as a function applied bias. energy distribution profile N"s"s obtained C"H"F-C"L"F method gives peak about mid-gap Si. In addition, high (1MHz) values measured under reverse forward corrected for effect series resistance (R"s) obtain real capacitors. dependent C-V G/@w-V confirm R"s are important parameters strongly influence
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