On the Forward Bias Excess Capacitance at Intimate and MIS Schottky Barrier Diodes with Perfect or Imperfect Ohmic Back Contact
作者： B Bati , Ç Nuhoğlu , M Sağlam , E Ayyildiz , A Türüt
DOI: 10.1238/PHYSICA.REGULAR.061A00209
关键词: SBDS 、 Schottky diode 、 Schottky barrier 、 Diode 、 Condensed matter physics 、 Materials science 、 Capacitance 、 Layer (electronics) 、 Ohmic contact
摘要: … or a week to produce an imperfect-ohmic contact, and we did not etch the native … ohmic contacts were made by evaporating Au-Sb. One of the pieces with perfect-back ohmic contact (…
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researchgate.net 参考文章(20)
Jürgen H. Werner, Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes Springer, Boston, MA. pp. 235- 256 ,(1989) , 10.1007/978-1-4613-0795-2_14
Metallization and Metal-Semiconductor Interfaces Plenum Press. ,(1989) , 10.1007/978-1-4613-0795-2
A Türüt, B Bati, A Kökçe, M Sağlam, N Yalçin, The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect Physica Scripta. ,vol. 53, pp. 118- 122 ,(1996) , 10.1088/0031-8949/53/1/023
Paul S. Ho, Edward S. Yang, Howard L. Evans, Xu Wu, Electronic states at silicide-silicon interfaces Physical Review Letters. ,vol. 56, pp. 177- 180 ,(1986) , 10.1103/PHYSREVLETT.56.177
A. Singh, Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation Solid-state Electronics. ,vol. 28, pp. 223- 232 ,(1985) , 10.1016/0038-1101(85)90002-4
S. K. Cheung, N. W. Cheung, Extraction of Schottky diode parameters from forward current‐voltage characteristics Applied Physics Letters. ,vol. 49, pp. 85- 87 ,(1986) , 10.1063/1.97359
Xu Wu, Edward S. Yang, Interface capacitance in metal‐semiconductor junctions Journal of Applied Physics. ,vol. 65, pp. 3560- 3567 ,(1989) , 10.1063/1.342631
Abdulmecit Türüt, Mustafa Saǧlam, Determination of the density of Si-metal interface states and excess capacitance caused by them Physica B: Condensed Matter. ,vol. 179, pp. 285- 294 ,(1992) , 10.1016/0921-4526(92)90628-6
H.C. Card, On the direct currents through interface states in metal-semiconductor contacts Solid-State Electronics. ,vol. 18, pp. 881- 883 ,(1975) , 10.1016/0038-1101(75)90013-1
P. Chattopadhyay, B. RayChaudhuri, Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes Solid-state Electronics. ,vol. 36, pp. 605- 610 ,(1993) , 10.1016/0038-1101(93)90272-R