The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon
作者： M. Çakar , A. Türüt , Y. Onganer
关键词: Chemical vapor deposition 、 Conductance 、 Condensed matter physics 、 Silicon 、 Chemistry 、 Relaxation (NMR) 、 Electrical resistivity and conductivity 、 Heterojunction 、 Capacitance 、 Optics 、 Sublimation (phase transition)
摘要: Abstract The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. sublimed top p-Si surface. barrier height and ideality factor values 0.79±0.04 1.13±0.06 eV for this structure have obtained from forward bias current–voltage ( I – V ) characteristics. From low capacitance-frequency C–f as well conductance–frequency G–f characteristics, energy distribution interface states their relaxation time determined in range (0.53− E v )–(0.79− taking into account data. state density N ss ranges 4.93×10 10 cm −2 −1 (0.79− to 3.67×10 13 eV. Furthermore, 3.80×10 −3 s 4.21×10 −4 It seen that an exponential rise with midgap towards valence band. shows slow band midgap.
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