Study of carrier blocking property of poly-linalyl acetate thin layer by electric-field-induced optical second-harmonic generation measurement
作者： Dai Taguchi , Takaaki Manaka , Mitsumasa Iwamoto , Liam J. Anderson , Mohan V. Jacob
DOI: 10.1016/J.CPLETT.2013.12.070
关键词: Nanotechnology 、 Double layer (biology) 、 Optoelectronics 、 Electron 、 Layer (electronics) 、 Thin layers 、 Electric field 、 Blocking (radio) 、 Diode 、 Second-harmonic generation 、 Materials science
摘要: By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the carrier-blocking property of poly-linalyl acetate (PLA) thin layers sandwiched in indium-zinc-oxide (IZO)/PLA/C60/Al double-layer diodes. Results showed that PLA layer totally blocks electrons crossing C60 layer, and also holes entering from IZO layer. The EFISHG measurement effectively substantiates hole-blocking electron-blocking double
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