Temperature dependence of optical properties of the deep sulfur center in silicon

摘要: Spectral distributions of the hole photoionization cross section deep sulfur center in silicon have been measured at 10 different temperatures within range 75 K≤T≤297 K applying steady‐state photocurrent technique. Zero‐phonon binding energies donor level determined these by using a detailed numerical fitting procedure. The temperature dependence energy is well described novel analytical formula with zero‐temperature 557 meV. Further analysis our data resulted lattice adjustment (Franck–Condon shift) 51 meV and an associated average phonon 33