Methods and apparatus for forming barrier layers in high aspect ratio vias
作者： Jianming Fu , Walter Benjamin Glenn , Praburam Gopalraja , Ling Chen , Fusen Chen
DOI:
关键词: Optoelectronics 、 Etching (microfabrication) 、 Atomic layer deposition 、 Chemistry 、 Nanotechnology 、 Barrier layer 、 Sputtering
摘要: In a first aspect, method is provided that includes (1) forming barrier layer over the sidewalls and bottom of via using atomic deposition within an (ALD) chamber; (2) removing at least portion from by sputter etching; (3) depositing second on ALD chamber. Numerous other embodiments are provided, as systems, methods computer program products in accordance with these aspects.
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