作者: Sanghun Lee , Dongkeun Cheon , Won-Jeong Kim , Kyung-Jun Ahn , Woong Lee
DOI: 10.1088/0268-1242/26/11/115007
关键词: Pulsed DC 、 Analytical chemistry 、 Ceramic 、 Sputter deposition 、 Transparent conducting film 、 Crystallinity 、 Doping 、 Oxide 、 Materials science 、 Chemical engineering 、 Electrical resistivity and conductivity
摘要: Composition-dependent changes in the properties of Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were investigated by preparing a series GZO on glass substrates via pulsed dc magnetron sputtering with ceramic targets having various Ga2O3 concentrations at temperatures. As content target increased, crystalline quality was improved as revealed intense (0 0 2) diffraction peaks, which accompanied increased carrier concentrations. When low, it deduced from crystallinity and concentration that Ga or its species functioned primarily crystal growth promoter, more distinctive lower deposition Meanwhile, formation secondary phases, detrimental to mobility, rather enhanced up intermediate temperature then suppressed further increasing temperature. Consequently, doping efficiency therefore lowest electrical resistivity could be achieved combination higher Electrical optical transmittance prepared this study fulfilled requirements for TCO films.