Experimental Studies on the Electronic Structure of Pb1-xEuxTe

摘要: P- and n-type Pb1-xEuxTe (0≤x≤0.25) single-crystal films were prepared on BaF2 (111) substrates using the hot-wall epitaxy technique. The lattice constant increases nonlinearly with composition ratio x, energy gap rapidly up to x=0.07, while its rate of increase decelerates for x>0.07. X-ray photoelectron spectroscopy measurements revealed that localized Eu 4f level centers around 1.2-1.5 eV below valence band maximum. It is seen from transport all are metallic but p-type a metal-to-insulator transition takes place at x=0.07. Using these results, electronic structure proposed in which electron plays an important role properties intermediate (x>0.07).