Electrical properties of heteroepitaxial grown tin‐doped indium oxide films
作者： Itaru Yasui , Masayuki Kamei , T. E. Haynes , Naoaki Taga , Hidefumi Odaka
DOI: 10.1063/1.362910
关键词: Sputtering 、 Epitaxy 、 Crystallinity 、 Analytical chemistry 、 Materials science 、 Indium 、 Rutherford backscattering spectrometry 、 Electron mobility 、 Sputter deposition 、 Yttria-stabilized zirconia
摘要: … the decrease in nN by the het… nN by the heteroepitaxial growth in Sn-doped films was about quintuple as larger as the one for nondoped IO films. Therefore the larger n and smaller nN …
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