Special-Purpose SOI
作者： James B. Kuo , Ker-Wei Su
DOI: 10.1007/978-1-4757-2823-1_7
关键词: Optoelectronics 、 MESFET 、 BiCMOS 、 Materials science 、 Bipolar junction transistor 、 Transistor 、 Silicon on insulator 、 Heterojunction bipolar transistor 、 PMOS logic 、 Power semiconductor device
摘要: In this chapter, special-purpose SOI devices are described. Fully-Depleted Lean-Channel Transistors (DELTA), which similar to double-gate CMOS devices, vertical transistors. the beginning of DELTAs presented. order improve surface-scattering mobility PMOS SiGe-channel were reported. The is assuming concept from heterojunction bipolar transistors (HBT) based on engineering bandgap narrowing. However, due SiGe quantum well introduced, body effect much more complicated than conventional devices. following portion technology has also been used integrate power Owing buried oxide structure, suitable for high-temperature operations. DMOS Recently, BiCMOS MESFET and JFETs have created. addition, single-electron (SET) built SIMOX substrates realized. Amorphous polysilicon thin-film insulators LCD. these described sequentially.
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