Microscopic pattern forming method

摘要: PURPOSE: To conduct a direct patterning by electron beam etching using no mask layer in highly precise manner conducting microscopic pattern lithography while the material to be processed is being cooled. CONSTITUTION: The reaction of region accelerated irradiation focussed on surface 103 which gas adsorption 102 formed. At this time, sample and processing side wall, generating progress, can suppressed cooling processed. more precise, chemical between molecule atoms accelerated, at same product 104 efficiently removed effect desorption excitation, only excitation made possible completely preventing due low temperature part where an not projected. Accordingly, directly drawn manner. COPYRIGHT: (C)1993,JPO&Japio