Convertible multi-function microelectronic logic gate structure and method of fabricating the same

摘要: A plurality of field effect transistors (FETS) (Q 0 to Q n-1 A, and B B) are arranged in a structure (10) normally perform first logic function such as NAND. Selectively implanting the channel region (38) at least one FETs (30) with sufficient ions predetermined ion species that respective FET maintains constant state (constantly turned ON or OFF) for all logical values applied gate voltage converts second NOR. Alternatively, states may be "stuck high" (constant high output) low" low output). The implants substantially undetectable, rendering highly resistant reverse engineering.