Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)
作者： Thushari Jayasekera , B. D. Kong , K. W. Kim , M. Buongiorno Nardelli
DOI: 10.1103/PHYSREVLETT.104.146801
关键词:
摘要: Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices dopants, demonstrate that one achieve variation valence offset between Dirac point edge SiC up 1.5 eV. Finally, via appropriate magnetic induce half-metallic behavior monolayer. These results clearly establish potential for utilization innovative electronic spintronic devices.
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postech.ac.kr参考文章(28)
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