Determination of the Young's modulus of pulsed laser deposited epitaxial PZT thin films

摘要: We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring difference in cantilever resonance frequency before and after deposition. By carefully optimizing accuracy this technique, we were able to show that PZT silicon is dependent in-plane orientation, using cantilevers oriented along 1 0 directions. Deposition affects their flexural rigidity increases mass, which results a change frequency. An analytical relation was developed determine effective from shift cantilevers, measured both In addition, appropriate valid for our cantilevers’ dimensions used calculations combined finite-element (FE) simulations approach. took extra care eliminate errors determination film, accurately determining many different lengths. Over-etching during release handle wafer caused an undercut. Since undercut cannot be avoided, length calculations. The PZT, deposition, 103.0 GPa with standard error ± 1.4 crystal direction silicon. For direction, 95.2 2.0 GPa.