作者: Atul Khanna , Deepak G. Bhat
DOI: 10.1116/1.2431353
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摘要: Alumina coatings were deposited on silicon (111 orientation) substrates by reactive ac magnetron sputtering. Film deposition was done using Al targets and three O2∕Ar gas flow rate ratios at 5kW power. X-ray diffraction studies showed that films crystalline contained several phases of alumina. Secondary ion mass spectroscopy analyses used to measure O∕Al atomic ratio Ar H concentrations in the films. Hydrogen content depended O2 partial pressure during sputtering also arrival O species seemed influence crystallinity coatings.