作者: Atul Khanna , Deepak G. Bhat
DOI: 10.1116/1.2730513
关键词: Thin film 、 Crystal 、 Silicon 、 Sputter deposition 、 Sputtering 、 Materials science 、 Scanning electron microscope 、 Chemical engineering 、 Microstructure 、 Crystallography 、 Texture (crystalline)
摘要: AlN films were deposited on microscopy glass slide and silicon (111 orientation) substrates by reactive ac magnetron sputtering using two nitrogen concentrations three discharge powers of 1.5, 2.5, 5.0kW. X-ray diffraction studies showed that prepared Si hexagonal wurtizite phase. Films also contained small amounts the cubic phase besides predominantly coatings textured towards (00∙2) plane; this preferred orientation crystals was found to decrease with increase in power. Scanning electron at higher concentration have a microstructure consisting pebblelike crystals, some which shape. The crystal size increased power range 70–230nm.