作者: Majid Sanaeepur , Arash Yazdanpanah Goharrizi , Mohammad Javad Sharifi
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摘要: Device performance of armchair graphene nanoribbon field effect transistors in the presence surface roughness scattering is studied. A 2-D Gaussian autocorrelation function employed to model roughness. Tight-binding Hamiltonian and nonequilibrium Green's formalism are used perform atomic scale electronic transport simulation. The geometrical parameters on ON-current, OFF-current, transconductance, subthreshold swing investigated. Surface can strongly affect device depending how large amplitude or small correlation length.