作者: Sina Bakhtavari Mamaghani , Fatemeh Eslaminasab , Arash Yazdanpanah Goharrizi
DOI: 10.1109/IRANIANCEE.2017.7985470
关键词:
摘要: In recent years we have witnessed many breakthroughs in the field of graphene nanoribbons. The promising features these structures created new opportunities manufacturing electronic devices. However, due to low precision synthesizing procedures, process variation is still as a concerning challenge developing nanoscale this paper, theoretically studied impact during progress Boron/Nitrogen doping, strain implement, and antidote insertion. Our study will focus on Armchair Graphene Nanoribbons. order investigate our results, simulations using MATLAB tool, tight-binding approach, Monte Carlo method been carried out. results demonstrated that vertical doping most reliable approach compare others. This also provides tunable band gap size wide range, allowing its usage future