Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining
作者： W. Barth , T. Debski , F. Shi , P. Hudek , I. Kostic
DOI: 10.1116/1.1324648
关键词:
摘要: An electron emission behavior of field arrays based on a new bulk/surface silicon micromachining method fabrication was studied. The process developed is simple and allows self-aligned gate electrode formation. the emitter tips enhanced by 50 nm diamond-like carbon (DLC) film formed chemical vapor deposition. Detailed Raman, Auger, transmission microscopy (TEM) investigations deposited DLC films will be presented. Results about presence nanocrystalline diamond obtained with Raman spectroscopy could not confirmed TEM (the smaller than 10 nm).
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