Gated field emitter arrays
作者： Tomasz Debski , Wolfgang Barth , Ivo W. Rangelow , Steffen Biehl , Piotr Grabiec
DOI: 10.1016/S0167-9317(01)00557-3
关键词: Field emission display 、 Optoelectronics 、 Electrode 、 Field electron emission 、 Chemical vapor deposition 、 Surface micromachining 、 Common emitter 、 Materials science 、 Engraving 、 Fabrication 、 Nanotechnology
摘要: Abstract The successful fabrication of field emission (FE) devices is directly related to process simplicity and device performance, which depends a large extent on the tip material emitter geometry. On other hand, these characteristics are most important issues influencing industrial applicability FE devices. In typical solutions single cells consist sharp located in hollow, with apex surrounded by gate. described here simple allows self-aligned gate electrode formation. tips supported 50-nm diamond-like-carbon (DLC) film formed chemical vapor deposition.
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