O− detected by ESR as a radiation‐induced electron‐excess defect in KClO3

作者: J. R. Byberg

DOI: 10.1063/1.442422

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摘要: A family of ESR spectra from KClO3 crystals irradiated with x rays at 26 K are assigned to electron‐excess defects consisting O− ions trapped in different environments, which may be identified because the electron spin on polarizes adjacent ions. In primary configurations, is associated ClO−2. Secondary between two ClO−3 ions, arise a thermally activated substitution process Grotthuss type: leading migration excess negative charge along crystallographic axis a. The structurally very similar those observed earlier KClO4. As KClO4, reacts O2 ∼230 yield O−3.

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