Applicability of molecular beam deposition for the growth of high-k oxides

摘要: Following the demand of replacing conventional dielectrics in semiconductor industry, a material screening for new high-k is necessary. In this article, molecular beam deposition presented as versatile and valuable tool growing dielectric films. ZrO2 was chosen an example to demonstrate capability grow thin metal-insulator-metal stack. A k-value from 21 26 could be achieved as-grown This improved even further up 30 by performing postdepositions anneals that result capacitance equivalent thickness 1.5 nm at leakage current density 1.5×10−7 A/cm2. addition, crystallization behavior investigated.