50 nm linewidth platinum sidewall lithography by effusive‐source metal precursor chemical deposition and ion‐assisted etching

作者: David S. Y. Hsu

DOI: 10.1063/1.106070

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摘要: Vertical platinum sidewall structures 50 nm thick and 700 tall have been fabricated by Pt deposition from the thermal decomposition of tetrakis‐(trifluorophosphine)‐platinum using an effusive gas source followed ion‐assisted etching. Scanning electron microscope micrographs show that sidewalls high uniformity, very fine grains, sharp contours, demonstrating a degree conformal deposition. Auger microscopy confirms presence only in sidewalls. X‐ray photoelectron spectroscopy analysis as‐deposited film reveals no detectable impurity Scotch tape test shows good bonding film. The method is suitable to large‐scale processing.

参考文章(2)
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