Si K x-ray-absorption spectra of single-crystal Si and amorphous SiO2.
作者： Naoyuki Nagashima , Asao Nakano , Kiyoshi Ogata , Masashi Tamura , Katsuro Sugawara
DOI: 10.1103/PHYSREVB.48.18257
关键词:
摘要: Fine structures near the Si K-absorption edges of single-crystal and amorphous SiO 2 were measured for well-characterized films by a transmission method with high-resolution double-crystal spectrometer. The spectrum was not affected changes angle between polarization vector crystal axis. Both showed strong absorption lines edges. Energies determined to be 1840.3 1846.1 eV , respectively. edge structure shows features related theoretical empty-conduction-band Si. In line can interpreted in terms excitonic state
harvard.edu
sci-hub.se 参考文章(15)
F. Comin, L. Incoccia, P. Lagarde, G. Rossi, P. H. Citrin, Local atomic structure of a clean surface by surface-extended x-ray absorption fine structure: Amorphized Si Physical Review Letters. ,vol. 54, pp. 122- 125 ,(1985) , 10.1103/PHYSREVLETT.54.122
A. Bianconi, A. Di Cicco, N. V. Pavel, M. Benfatto, A. Marcelli, C. R. Natoli, P. Pianetta, J. Woicik, Multiple-scattering effects in the K-edge x-ray-absorption near-edge structure of crystalline and amorphous silicon. Physical Review B. ,vol. 36, pp. 6426- 6433 ,(1987) , 10.1103/PHYSREVB.36.6426
C. Senemaud, M.T.Costa Lima, J.A. Roger, A. Cachard, X-ray K absorption spectra of silicon in Si, SiO and SiO2 Chemical Physics Letters. ,vol. 26, pp. 431- 433 ,(1974) , 10.1016/0009-2614(74)89065-2
E. O. Kane, Band Structure of Silicon from an Adjusted Heine-Abarenkov Calculation Physical Review. ,vol. 146, pp. 558- 567 ,(1966) , 10.1103/PHYSREV.146.558
D. J. Stukel, R. N. Euwema, Self-Consistent Orthogonalized-Plane-Wave Energy-Band Study of Silicon Physical Review B. ,vol. 1, pp. 1635- 1643 ,(1970) , 10.1103/PHYSREVB.1.1635
James R. Chelikowsky, Marvin L. Cohen, Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors Physical Review B. ,vol. 14, pp. 556- 582 ,(1976) , 10.1103/PHYSREVB.14.556
W. Y. Ching, Microscopic Calculation of Localized Electron States in an Intrinsic Glass Physical Review Letters. ,vol. 46, pp. 607- 610 ,(1981) , 10.1103/PHYSREVLETT.46.607
W. Y. Ching, Theory of amorphous SiO 2 and SiO x . II. Electron states in an intrinsic glass Physical Review B. ,vol. 26, pp. 6622- 6632 ,(1982) , 10.1103/PHYSREVB.26.6622
Raju P. Gupta, Electronic structure of crystalline and amorphous silicon dioxide Physical Review B. ,vol. 32, pp. 8278- 8292 ,(1985) , 10.1103/PHYSREVB.32.8278
Asao Nakano, Kiyoshi Ogata, Naoyuki Nagashima, An Origin ofKLAbsorption Edge in Si·K-XAFS Japanese Journal of Applied Physics. ,vol. 32, pp. 70- ,(1993) , 10.7567/JJAPS.32S2.70