Si K and Co L3 XANES study of thin-film CoSi2
作者： W.F. Pong , Y.K. Chang , R.A. Mayanovic , G.H. Ho , H.J. Lin
DOI: 10.1016/S0368-2048(96)80038-7
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摘要: Abstract X-ray absorption near edge structure (XANES) spectra of thin-film CoSi 2 were measured at the Si K- and Co L 3 -edge. The K-edge spectrum for showed a dramatic reduction intensity in first broad feature accompanied by an increase peaked higher energies when compared to crystalline Si. We attribute these two features 1s photoelectron excitations 3p nonbonding band relatively narrow hybridized p - 3d antibonding states, respectively. -edge white line reveals three distinct which can be attributed unoccupied states (3d, 4s) states.
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