作者: AP Hitchcock , T Tyliszczak , P Aebi , XH Feng , ZH Lu
DOI: 10.1016/0039-6028(94)91306-4
关键词:
摘要: The polarization dependence of the Si K-edge X-ray absorption spectra of several [(Si) m (Ge) n ] p atomic layer superlattice (ALS) materials grown on both Si(100) and Ge(100) have …