Thermal stability of the [(Si)m/(Ge)n]p superlattice interface
作者： T. E. Jackman , J.-M. Baribeau , D. J. Lockwood , P. Aebi , T. Tyliszczak
DOI: 10.1103/PHYSREVB.45.13591
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摘要: The structure of [(Si) m /(Ge) n ] p superlattice interfaces and the onset relaxation interdiffusion initiated by annealing have been investigated with use extended x-ray-absorption fine Raman scattering. For as-grown material, Ge-Ge bond length (0.2409 nm) was equal to that calculated for a fully strained Ge layer (0.2412 while Si-Ge significantly shorter. results show conclusively substantial intermixing along partial bonds occurs even shortest anneal at 700°C
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sci-hub.se 参考文章(23)
Thomas P. Pearsall, Silicon-germanium alloys and heterostructures: Optical and electronic properties Critical Reviews in Solid State and Materials Sciences. ,vol. 15, pp. 551- 600 ,(1989) , 10.1080/10408438908243745
A. A. Williams, J. M. C. Thornton, J. E. Macdonald, R. G. van Silfhout, J. F. van der Veen, M. S. Finney, A. D. Johnson, C. Norris, Strain relaxation during the initial stages of growth in Ge/Si(001) Physical Review B. ,vol. 43, pp. 5001- 5011 ,(1991) , 10.1103/PHYSREVB.43.5001
F. K. LeGoues, V. P. Kesan, S. S. Iyer, J. Tersoff, R. Tromp, Surface-stress-induced order in SiGe alloy films. Physical Review Letters. ,vol. 64, pp. 2038- 2041 ,(1990) , 10.1103/PHYSREVLETT.64.2038
D.J. Lockwood, K. Rajan, E.W. Fenton, J.-M. Baribeau, M.W. Denhoff, Ordering in Si1−xGex crystals Solid State Communications. ,vol. 61, pp. 465- 467 ,(1987) , 10.1016/0038-1098(87)90492-3
D. E. Jesson, S. J. Pennycook, J.-M. Baribeau, Direct imaging of interfacial ordering in ultrathin (SimGen)p superlattices. Physical Review Letters. ,vol. 66, pp. 750- 753 ,(1991) , 10.1103/PHYSREVLETT.66.750
M. Copel, M. C. Reuter, Efthimios Kaxiras, R. M. Tromp, Surfactants in epitaxial growth. Physical Review Letters. ,vol. 63, pp. 632- 635 ,(1989) , 10.1103/PHYSREVLETT.63.632
S. J. Chang, K. L. Wang, R. C. Bowman, P. M. Adams, Interdiffusion in a symmetrically strained Ge/Si superlattice Applied Physics Letters. ,vol. 54, pp. 1253- 1255 ,(1989) , 10.1063/1.100731
J.‐M. Baribeau, R. Pascual, S. Saimoto, Interdiffusion and strain relaxation in (SimGen)p superlattices Applied Physics Letters. ,vol. 57, pp. 1502- 1504 ,(1990) , 10.1063/1.103377
R. Pascual, S. Saimoto, J. M. Baribeau, Effects of thermal processing on (SimGen)p superlattices Canadian Journal of Physics. ,vol. 69, pp. 241- 245 ,(1991) , 10.1139/P91-040
S. S. Iyer, J. C. Tsang, M. W. Copel, P. R. Pukite, R. M. Tromp, Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering Applied Physics Letters. ,vol. 54, pp. 219- 221 ,(1989) , 10.1063/1.101014