STRUCTURE OF CHEMICALLY PREPARED PASSIVATION LAYERS ON SINGLE CRYSTAL SEMICONDUCTOR SURFACES
作者： AP Hitchcock , T Tyliszczak , P Brodersen , ZH Lu , MWC Dharma-Wardana
DOI: 10.1142/S0218625X99001232
关键词:
摘要: Monolayers of S and Cl have useful passivation properties for group IV III–V semiconductor surfaces. The structures Ge(111)–Cl; GaAs(111)–Cl; GaAs(111)A–S, GaAs(111)B–S GaAs(001)–S monolayer-passivated single crystal surfaces been studied using synchrotron radiation X-ray absorption fine structure spectroscopy (XAFS). near edge extended signals are interpreted comparisons to multiple scattering XAFS calculations and, in the cases Ge(111)–Cl GaAs(111)–Cl, comparison first-principles calculations. Relationships between surface development improved passivated discussed.
harvard.edu
sci-hub.se 参考文章(45)
Linus Pauling, The Nature of the Chemical Bond ,(1939)
H. Oyanagi, R. Shioda, Y. Kuwahara, K. Haga, Surface-Sensitive XAFS in the Hard X-ray Region with Sub-Monolayer Sensitivity. Journal of Synchrotron Radiation. ,vol. 2, pp. 99- 105 ,(1995) , 10.1107/S0909049595001506
ZH Lu, MJ Graham, None, Determination of the structure of GaAs(100)-S with chemical-state-specific photoelectron diffraction. Physical Review B. ,vol. 48, pp. 4604- 4607 ,(1993) , 10.1103/PHYSREVB.48.4604
AP Hitchcock, T Tyliszczak, P Aebi, XH Feng, ZH Lu, J-M Baribeau, TE Jackman, None, Polarization dependence of the Si K-edge X-ray absorption spectra of Si-Ge atomic layer superlattices Surface Science. ,vol. 301, pp. 260- 272 ,(1994) , 10.1016/0039-6028(94)91306-4
N. A. Ives, G. W. Stupian, M. S. Leung, Unpinning of the Fermi level on GaAs by flowing water Applied Physics Letters. ,vol. 50, pp. 256- 258 ,(1987) , 10.1063/1.98217
Munehiro Sugiyama, Satoshi Maeyama, Sulfur-adsorbed GaAs(001) surface studied by X-ray absorption near edge structure, X-ray standing waves and X-ray diffraction Surface Science. ,vol. 385, ,(1997) , 10.1016/S0039-6028(97)00388-9
Takahisa Ohno, Sulfur passivation of GaAs surfaces. Physical Review B. ,vol. 44, pp. 6306- 6311 ,(1991) , 10.1103/PHYSREVB.44.6306
ZH Lu, F Chatenoud, MM Dion, MJ Graham, HE Ruda, I Koutzarov, Q Liu, CEJ Mitchell, IG Hill, AB McLean, None, Passivation of GaAs(111)A surface by Cl termination Applied Physics Letters. ,vol. 67, pp. 670- 672 ,(1995) , 10.1063/1.115198
R. D. Bringans, R. I. G. Uhrberg, R. Z. Bachrach, John E. Northrup, Arsenic-terminated Ge(111): An ideal 1×1 surface Physical Review Letters. ,vol. 55, pp. 533- 536 ,(1985) , 10.1103/PHYSREVLETT.55.533
P. Moriarty, B. Murphy, L. Roberts, A. A. Cafolla, G. Hughes, L. Koenders, P. Bailey, D. A. Woolf, Chemical bonding and structure of the sulfur treated GaAs(111)B surface Applied Physics Letters. ,vol. 67, pp. 383- 385 ,(1995) , 10.1063/1.114636