Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

摘要: This paper investigates effects of silver nanoparticles (Ag NPs) layer thickness towards properties black silicon (b-Si) fabricated by two-step metal-assisted chemical etching for potential application in photovoltaic (PV) devices. Ag NPs with different thicknesses (1.3–5.1 µm) are deposited on monocrystalline (mono c-Si) wafers electroless deposition AgNO3/HF aqueous solution 10–40 s. is followed HF:H2O2:DI H2O 20 s. Surface morphological investigation confirms presence b-Si nanowires height 250–577 nm and diameter 100–200 nm. The suppress broadband reflectance from the over 300–1100 nm wavelength region, due to refractive index grading effect. Sample 5.1 µm exhibits average 577 nm 200 nm after etching. sample demonstrates lowest weighted 5.5% compared other samples. absorption 96.5% at 600 nm. enhanced light leads maximum short-circuit current density (Jsc(max)) 39.7 mA/cm2, or 51% relative enhancement planar reference sample.