Investigation of Ag-Assisted Chemical Etching on (100) and (111) Contiguous Silicon Surfaces

摘要: Electroless silver deposition (for 1–100s) has been simultaneously performed on (100) and (111) planes of macro micro patterned silicon, fabricated using optical lithography anisotropic etching with alkaline solution. Metal clusters formation occurs preferentially the upper edge region separating two main planes. Their density mean size are higher plane. Similar experiments same samples but surface amorphized by ion implantation elucidated role played preferential mass transport caused pattern geometry. For micro-sized pyramidal holes, non uniform distribution metal is enhanced. The mainly top strips surrounding pyramids. subsequent oxidation silicon under metallic gives rise to nanowires orientation in nanopillars patterns respectively. Nanowire’s tips sites for as shown after re-immersion plating Samples contiguous one dimensional nanostructures different could be used study properties’ anisotropy. might relevance field metal-semiconductor contacts. © 2013 Electrochemical Society. [DOI: 10.1149/2.002311jss] All rights reserved.