Method for producing electronic device, electronic device, semiconductor device, and transistor
作者： Masanori Shirai , Satoru Takasawa , Tadashi Masuda , Satoru Ishibashi , Yasuo Nakadai
DOI:
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摘要: A technique is provided which prevents an increase in the resistivity of a conductive wiring film. layer containing Ca content rate 0.3 atom % or more on surfaces each films are to be exposed gas Si chemical structure at high temperature. When gate insulating protection film formed surface layer, atoms do not diffuse into and resistance value does increase, even if raw material . Further, CuCaO can as adhesive for preventing diffusion from glass substrate silicon semiconductor.
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