Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth
作者： Shu-Lu Chen , Peter B Griffin , James D Plummer
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摘要: A high-quality III-V material on Si substrates has been a primary goal for ultimate device integration. By using the rapid melt growth (RMG) method, we have demonstrated transformation of amorphous to single crystal both GaAs and GaSb bulk substrates. High-resolution pictures selective area diffraction patterns show single-crystal films directly seeded from substrate propagated along patterned stripes top insulating layer. Energy-dispersive X-ray spectroscopy was applied investigate stoichiometry compound after resolidification. The results direct relationship between quality atomic composition, which suggests congruent during solidification process despite possibility out gassing RMG process. This provides simple path monolithic optical-electrical
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