High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers
作者： Y.C. Chen , C.S. Wu , C.K. Pao , M. Cole , Z. Bardai
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摘要: A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for fabrication of high power X-band monolithic amplifiers. The material structure recess process were engineered such that device breakdown voltage optimized without sacrificing gain efficiency. two-stage amplifier based on has been developed. When operated at V/sub ds/=10 V, an output 9 W achieved across 7 10 GHz frequency range. peak saturated W, corresponding a density 1 W/mm, occurred 8.5 GHz. biased generated 6.7 with associated added efficiency 40%
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