Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature
作者： M. M. R. Howlader , F. Zhang , M. J. Deen , T. Suga , A. Yamauchi
DOI: 10.1116/1.3549114
关键词:
摘要: A comprehensive investigation of the surfaces copper through silicon vias (Cu-TSVs) and gold stud bumps is presented. These were bonded at room temperature using a nanobonding interconnection equipment. The influence heating on interface was also studied. In order to achieve an intimate contact between Au-stud Cu-TSVs, flattened under external force 20 N before bonding. surface roughness area improved due deformation bumps. Specimens with high provided better alignment accuracy than those low deformation. Cu-TSV showed inhomogeneous behavior electroplating chemical mechanical polishing. Tensile pulling test interfaces three fractures modes in bulk Au bump pad. electrical resistance dependent morphology TSVs, distance t...
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