AlSm and AlDy alloy thin films with low resistivity and high thermal stability for microelectronic conductor lines

摘要: Abstract The addition of either Sm or Dy rare earth metal elements to Al thin films decreases markedly the grain size matrix and largely suppresses growth hillock whisker thermal defects at high temperatures (350–450°C). A large number particles fine metallic compounds Al3RE (RESm Dy) were segregated in an matrix, mostly boundaries, after annealing 350°C. resistivities above show very low values less than about 50 nμ m, without salient formation hillocks whiskers on film surfaces.