Insitugrowth of YBa2Cu3O7−xhighTcsuperconducting thin films directly on sapphire by plasma‐enhanced metalorganic chemical vapor deposition
作者： C. S. Chern , J. Zhao , Y. Q. Li , P. Norris , B. Kear
DOI: 10.1063/1.104258
关键词:
摘要: Highly c‐axis oriented YBa2Cu3O7−x superconducting thin films have been, in situ, deposited directly on sapphire substrate by a remote microwave plasma‐enhanced metalorganic chemical vapor deposition process (PE‐MOCVD). The were at temperature of 730 °C followed fast cooling. as‐deposited show attainment zero resistance 82 K and critical current density 104 A/cm2 70 K. ac susceptibility measurement indicated that the contain single phase. PE‐MOCVD was carried out commercial‐scale MOCVD reactor with capability uniform over 100 cm2 per growth run.
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