Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material
作者： Sunil N. Shabde , Yowjuang William Liu , Ting Yiu Tsui
DOI:
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摘要: A method (100) of determining a doping type and concentration semiconductor material (101) includes the steps moving carriers (103) in material, wherein number is function (101). The are deflected (130) toward surface (110) an accumulated charge profile on due to carriers, detected (140) used calculate (180) across
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