Method and circuit for reducing contact resistance of the potential probes of a four-point-probe in contact with a III-V compound semiconductor wafer

摘要: A method and circuit to enable Four-Point Probe Spreading Resistance techniques overcome the high contact resistance in measuring resistivities of III-V compound semiconductors. This is accomplished by using forward DC bias greatly reduce potential probe semiconductor while maintaining AC input impedance be several orders magnitude higher than resistance, thus enabling use component make measurements very accurately.