作者: Matthias Batzill , Erie H. Morales , Ulrike Diebold
DOI: 10.1103/PHYSREVLETT.96.026103
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摘要: Nitrogen doping-induced changes in the electronic properties, defect formation, and surface structure of TiO 2 rutile (110) and anatase (101) single crystals were investigated. No band gap narrowing is observed, but N doping induces localized N 2 p states within the band gap just above the valence band. N is present in a N (III) valence state, which facilitates the formation of oxygen vacancies and Ti 3 d band gap states at elevated temperatures. The increased O vacancy formation triggers the 1× 2 reconstruction of the rutile (110) surface …