EXTRA-EM: extraction of temperature and resistance for acceleration of electromigration at wafer-level
作者： M.J. Dion
DOI: 10.1109/RELPHY.1991.146031
关键词:
摘要: A thermal model and a control algorithm are developed for rapid electromigration (EM), which extracts both temperature resistance acceleration (EXTRA) from standard wafer-level test (SWEAT) structure. SWEAT structure complexity makes determination of the during execution stress very difficult. The originally is inaccurate because it cannot separate changes EM voiding, this adds variability to failure distributions. EXTRA uses heat flow characteristics individual regions provide (1) narrow region separated due (2) convergence, (3) without empirically derived software, (4) overall reduced in >
sci-hub.se 参考文章(7)
C.R. Crowell, C.C. Shih, V. Tyree, Simulation and testing of temperature distribution and resistance versus power for SWEAT and related Joule-heated metal-on-insulator structures reliability physics symposium. pp. 37- 43 ,(1990) , 10.1109/RELPHY.1990.66058
J.R. Black, Electromigration—A brief survey and some recent results IEEE Transactions on Electron Devices. ,vol. 16, pp. 338- 347 ,(1969) , 10.1109/T-ED.1969.16754
H.A. Schafft, Thermal analysis of electromigration test structures IEEE Transactions on Electron Devices. ,vol. 34, pp. 664- 672 ,(1987) , 10.1109/T-ED.1987.22978
Charles C. Hong, Dwight L. Crook, Breakdown Energy of Metal (BEM) - A New Technique for Monitoring Metallization Reliability at Wafer Level 23rd International Reliability Physics Symposium. pp. 108- 114 ,(1985) , 10.1109/IRPS.1985.362084
Robert E. Jones, Larry D. Smith, A new wafer-level isothermal Joule-heated electromigration test for rapid testing of integrated-circuit interconnect Journal of Applied Physics. ,vol. 61, pp. 4670- 4678 ,(1987) , 10.1063/1.338378
A.A. Bilotti, Static temperature distribution in IC chips with isothermal heat sources IEEE Transactions on Electron Devices. ,vol. 21, pp. 217- 226 ,(1974) , 10.1109/T-ED.1974.17899
Bryan J. Root, Tim Turner, Wafer Level Electromigration Tests for Production Monitoring 23rd International Reliability Physics Symposium. pp. 100- 107 ,(1985) , 10.1109/IRPS.1985.362083