On the status of wafer-level metal integrity testing
作者： Michael J. Dion
DOI: 10.1016/0026-2714(93)90087-F
关键词:
摘要: Abstract Wafer-level metal integrity testing is very complex. Trade-offs with test time, stress temperature, structure, technique, and true understanding of the stress, are all involved discussed in this work. A discussion conventional electromigration execution issues provided as a prelude to highly accelerated last section. Much published work wafer-level EM used help describe trade-offs involved.
elsevier.com
sci-hub.se 参考文章(16)
Harry Schafft, James A. Lechner, Babak Sabi, Mike Mahaney, Ron C. Smith, Statistics for electromigration testing reliability physics symposium. pp. 192- 202 ,(1988) , 10.1109/IRPS.1988.362221
C.R. Crowell, C.C. Shih, V. Tyree, Simulation and testing of temperature distribution and resistance versus power for SWEAT and related Joule-heated metal-on-insulator structures reliability physics symposium. pp. 37- 43 ,(1990) , 10.1109/RELPHY.1990.66058
M. J. Attardo, R. Rosenberg, Electromigration Damage in Aluminum Film Conductors Journal of Applied Physics. ,vol. 41, pp. 2381- 2386 ,(1970) , 10.1063/1.1659233
James R. Black, Electromigration of Al-Si Alloy Films 16th International Reliability Physics Symposium. pp. 233- 240 ,(1978) , 10.1109/IRPS.1978.362852
M.J. Dion, EXTRA-EM: extraction of temperature and resistance for acceleration of electromigration at wafer-level international reliability physics symposium. pp. 287- 297 ,(1991) , 10.1109/RELPHY.1991.146031
J.R. Black, Electromigration—A brief survey and some recent results IEEE Transactions on Electron Devices. ,vol. 16, pp. 338- 347 ,(1969) , 10.1109/T-ED.1969.16754
H.A. Schafft, Thermal analysis of electromigration test structures IEEE Transactions on Electron Devices. ,vol. 34, pp. 664- 672 ,(1987) , 10.1109/T-ED.1987.22978
Charles C. Hong, Dwight L. Crook, Breakdown Energy of Metal (BEM) - A New Technique for Monitoring Metallization Reliability at Wafer Level 23rd International Reliability Physics Symposium. pp. 108- 114 ,(1985) , 10.1109/IRPS.1985.362084
M. L. Dreyer, C. J. Varker, Electromigraton activation energy dependence on AlCu interconnect linewidth and microstructure Applied Physics Letters. ,vol. 60, pp. 1860- 1862 ,(1992) , 10.1063/1.107161
Robert E. Jones, Larry D. Smith, A new wafer-level isothermal Joule-heated electromigration test for rapid testing of integrated-circuit interconnect Journal of Applied Physics. ,vol. 61, pp. 4670- 4678 ,(1987) , 10.1063/1.338378