Switching of soft reference layers of magnetic memory devices
作者： Manish Sharma
DOI:
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摘要: A magnetic random access memory (MRAM) including an array of cells and a plurality word bit lines connecting columns rows the cells. Each cell has reference layer data layer. each magnetization that is switchable between two states under influence field. The MRAM also includes heating elements proximate to respective element provides in use for localized so as reduce coercivity facilitate switching without layers.
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